磁控溅射电致变色非晶态氧化钨薄膜

利用平面磁控反应溅射在具有透明导电膜的玻璃基片上沉积氧化钨膜层。Ｘ射线衍射分析结果表明，基片在室温状态下得到的膜呈非晶态。以０．２Ｎ浓度的ＨＣｌ为电解液，用电化学方法研究了Ｈ＋注入及抽出后氧化钨膜光学性能的变化及这种变化与膜的制备参数之间的关系。获得了沉积氧化钨膜近于最佳的工艺条件。在纯氧气氛下，溅射功率密度１．２Ｗ／ｃｍ２，溅射气体压强１．３Ｐａ时，制备的非晶态氧化钨膜，在５０次电化学循环后，漂白态与着色态的可见光透射率之差约为０．５７，其电化学循环的变色寿命也长。光电子能谱（ＸＰＳ）分析表明，Ｈ＋注入后着色态膜内出现了Ｗ５＋、Ｗ４＋。对电致变色机理也作了讨论。

MAGNETRON SPUTTERED AMORPHOUS TUNGSTEN OXIDE ELECTROCHROMIC FILMS

ungsten oxide films were deposited onto glass substrates coated with a transparent and electrically conducting (ITO) film by planar magnetron reactive sputtering. Tungsten oxide films are amorphous proved by X-ray diffraction, while the substrate at room temperature during the sputter processing. The liquid 0. 2 N HCl was selected as an electrolyte for research work. Better electrochromic properties of Tungsten oxide were achieved using near optimum sputter operating conditions: pure oxygen with 1. 3 Pa sputter gas pressure, and sputter power density about 1. 2 W/cm2. The optical properties of Tungsten oxide films were studied by transmittance and reflectance measurements (UV/VIS/NIR). The luminous and solar transmittance were calculated for films switched in both bleached and colored states. Corresponding optimum values for the films deposited by sputtering, the difference of luminous transmittance of bleached and colored states is 0. 57 after 50 electro-chemical cycles. W5 , W4 were found at colored state of the films proved by X-ray photoelectrons spectroscopy (XPS). The electrochromic mechanism of Tungsten oxide has been discussed as well.