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Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures |
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| Authors: | Alexander Y Polyakov Jin‐Hyeon Yun Haeng‐Keun Ahn Alexander S Usikov Eugene B Yakimov Sergey A Tarelkin Nikolai B Smirnov Kirill D Shcherbachev Heikki Helava Yuri N Makarov Sergey Yu Kurin Sergey I Didenko Boris P Papchenko In‐Hwan Lee |
| Affiliation: | 1. National University of Science and Technology MISiS, Moscow, Russia;2. School of Advanced Materials Engineering, Chonbuk National University, Jeonju, Korea;3. Nitride Crystals, Inc., Deer Park, USA;4. University ITMO, Saint Petersburg, Russia;5. Institute of Microelectronics Technology and High Purity Materials Russian Academy of Science, Chernogolovka, Russia;6. Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia;7. Nitride Crystals Ltd., Saint Petersburg, Russia |
| Abstract: | Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow nanoholes and injected with Ag/SiO2 or Al nanoparticles. A 1.8 times increase in the photoluminescence and microcathodoluminescence signal from the GaN active region was observed for 100 nm diameter Al nanoparticles, the efficiency decreased compared to the reference planar samples for small Al nanoparticles of 30–40 nm diameter, and a moderate increase of 1.2 times was detected for Ag/SiO2 nanoparticles. The observed phenomena are explained by the GaN emitter coupling with localized surface plasmons produced by metallic nanoparticles. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
| Keywords: | surface plasmons light emitting diodes photoluminescence AlGaN GaN heterostructures |
