65 nm工艺SRAM低能质子单粒子翻转错误率预估

质子单粒子效应是纳米工艺集成电路空间应用面临的主要辐射问题之一。本文开展了一款商业级65 nm工艺4 M×18 bit随机静态存储器（SRAM）质子单粒子翻转实验研究。针对地球同步轨道、低地球轨道，使用Space Radiation 7.0程序，预估了低能质子、高能质子和重离子引起的错误率。错误率预估分析结果表明，不同轨道及环境模型下低能质子错误率占总错误率的比例范围为1%~86%，其中太阳质子事件、地球俘获带等环境模型中低能质子单粒子翻转引起的错误率占主导，建议空间应用的元器件对低能质子不敏感。

Error Rate Prediction of Low Energy Proton Induced Single Event Upset for 65 nm SRAM

The single event effect induced by proton is main radiation problem of nanometre integrated circuit applied in spacecraft. In this paper, the low energy proton induced single event upset test was carried out on a 65 nm process, 4 M×18 bit static random access memory (SRAM). The error rate caused by low energy proton, high energy proton and heavy ion was estimated by using Space Radiation 7.0 program for geosynchronous orbit and low earth orbit. The prediction result of error rate shows that the error rate of low energy proton accounts for 1%-86% of the total error rate under different orbits and environmental modes, and the error rate caused by low energy proton is dominant in environmental modes such as solar proton event and earth capture zone. It is suggested that the components in space application should be insensitive to low energy proton.