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Pulsed laser deposition of (110) oriented semiconductive SrFeO3−x thin films |
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| Authors: | T Yu Y-F Chen Z-G Liu L Sun S-B Xiong N-B Ming Z-M Ji J Zhou |
| Affiliation: | (1) National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 & Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, P.R. China (Fax: +86-25-3300535, e-mail: yfchen @ nju.edu.cn), CN;(2) Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P.R. China, CN |
| Abstract: | The semiconductive perovskite-type oxide SrFeO3-x (x<0.16) (SFO) thin films have been directly fabricated on (001)SrTiO3 and (001)LaAlO3 single crystal substrates by pulsed laser deposition(PLD) under high oxygen partial pressure of 100 Pa. The SFO thin films were (110) oriented. The x-ray photoelectron spectroscopy (XPS) analysis showed that the surface of SFO thin film has strong gas absorption capability. The resistance versus temperature has been measured in the temperature range from 77 K to 300 K. The SFO thin film showed typical semiconductive property. Dependence of resistance of SFO thin film on oxygen pressure was measured and result showed that the SFO thin film had better oxygen sensitive property. Received: 14 May 1996/Accepted: 15 August 1996 |
| Keywords: | PACS: 73 61 Le 81 15 Fg |
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