| 受主掺杂对TiO2氧敏材料缺陷化学的影响 |
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| 引用本文： | 黎步银,周东祥,姜胜林,吕文中,龚树萍. 受主掺杂对TiO2氧敏材料缺陷化学的影响[J]. 压电与声光, 2002, 24(1): 47-49 |
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| 作者姓名： | 黎步银 周东祥 姜胜林 吕文中 龚树萍 |
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| 作者单位： | 华中科技大学,电子科学与技术系,武汉,430074 |
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| 基金项目： | 湖北省自然科学基金 (2 0 0 0 J164 ) |
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| 摘 要： | 对受主B2O5掺杂TiO2材料的高温电导进行了详细的测试；XRD分析表明少量受主掺杂并未改变材料的金红石结构；对比施主掺杂研究，出现了很多有趣的现象。施主掺杂样品在较高的测试温度（约950℃）下发生电导类型转变，而受主掺杂样品在较低的测试温度（约750℃）下发生电导类型转变。应用电子补偿及缺位补偿机制对电导特性进行了分析。
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| 关 键 词： | 氧敏材料 缺陷化学 受主掺杂 二氧化钛 半导体 |
| 文章编号： | 1004-2474(2002)01-0047-03 |
| 修稿时间： | 2001-09-02 |
Influence of Acceptor Doping on the Defect Chemistry of TiO2 |
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| Abstract: | High temperature conducting mechanism and defect chemistry of acceptor B 2O 3 doped TiO 2 were analyzed in detail;XRD analysis indicted that a small amount of donor dopant does not change the crystal structure significantly.Many interesting phenomena are found compared to donor doping TiO 2 oxygen sensing material.At higher oxygen partial pressure,conductivity mechanism of donor doping TiO 2 changes from n to p type conductivity transformation at higher measuring temperature,while conductivity mechanism of acceptor doping TiO 2 changes from p to n type conductivity transformation at lower measuring temperature.Conductivity characteristics are analyzed by electron compensation and vacancy compensation mechanism. |
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| Keywords: | titanate dioxide oxygen sensing material defect chemistry acceptor doping |
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