Reflection high-energy electron diffraction intensity oscillations during growth of (Al,Ga)As on GaAs(111)A期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Reflection high-energy electron diffraction intensity oscillations during growth of (Al,Ga)As on GaAs(111)A

Authors:	K. Sato M. R. Fahy I. Kamiya J. H. Neave B. A. Joyce

Affiliation:	^a Interdisciplinary Research Centre for Semiconductor Materials, Blackett Laboratory, Imperial College, Prince Consort Road London SW7 2BZ United Kingdom ^b Japan Energy Corporation, 10-1 Toranomon 2-chome, Minato-ku Tokyo 105 Japan

Abstract:	We have made a reflection high-energy diffraction (RHEED) intensity oscillation study of the growth of (Al,Ga)As on GaAs and (Al,Ga)As (111)A surfaces. The RHEED intensity oscillations during growth of (Al,Ga)As are dependent on both growth temperature and As₄:Ga flux ratio. In addition, the oscillation period decreases as the Al fraction in the (Al,Ga)As is increased. Changes in the oscillation period during growth of the first few monolayers of both GaAs on (Al,Ga)As and (Al,Ga)As on GaAs may indicate the intermixing of Al and Ga near the heterointerface.

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