The growth and properties of mixed group V nitrides |
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Authors: | J W Orton D E Lacklison N Baba-Ali C T Foxon T S Cheng S V Novikov D F C Johnston S E Hooper L C Jenkins L J Challis T L Tansley |
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Affiliation: | (1) Department of Electrical and Electronic Engineering, University of Nottingham, NG7 2RD University Park, Nottingham, England;(2) Department of Physics, University of Nottingham, NG7 2RD University Park, Nottingham, England;(3) School of Mathematics, Physics, Computing and Electronics, Maquarie University, 2109, NSW, Australia |
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Abstract: | Bearing in mind the problems of finding a lattice-matched substrate for the growth of binary group III nitride films and the
detrimental effect of the large activation energy associated with acceptors in GaN, we propose the study of the alloy system
AlGaAsN. We predict that it may be possible to obtain a direct gap alloy, with a band gap as wide as 2.8eV, which is lattice-matched
to silicon substrates. The paper reports our attempts to grow GaAsN alloy films by molecular beam epitaxy on either GaAs or
GaP substrates, using a radio frequency plasma source to supply active nitrogen. Auger electron spectra demonstrate that it
is possible to incorporate several tens of percent of nitrogen into GaAs films, though x-ray diffraction measurements show
that such films contain mixed binary phases rather than true alloys. An interesting observation concerns the fact that it
is possible to control the crystal structure of GaN films by the application of an As flux during growth. In films grown at
620°C a high As flux tends to increase the proportion of cubic GaN while also resulting in the incorporation of GaAs. Films
grown at 700°C show no evidence for GaAs incorporation; at this temperature, it is possible to grow either purely cubic or
purely hexagonal GaN depending on the presence or absence of the As beam. |
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Keywords: | Cubic GaN GaAsN mixed group V nitrides |
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