| DMOS辐照正空间电荷阈值电压模型 |
| |
| 引用本文： | 李泽宏,张波,李肇基,曹亮.DMOS辐照正空间电荷阈值电压模型[J].微电子学,2004,34(2):185-188. |
| |
| 作者姓名： | 李泽宏 张波 李肇基 曹亮 |
| |
| 作者单位： | 电子科技大学,微电子研究所,四川,成都,610054 |
| |
| 基金项目： | 国家自然科学基金资助项目(No 60076030,No 60276040) |
| |
| 摘 要： | 提出了一种DMOS辐照正空间电荷闽值电压模型。基于沟道杂质的非均匀分布，借助镜像法，导出辐照正空间电荷与沟道电离杂质的二维场和二维互作用势；求解泊松方程，由此给出DMOS辐照正空间电荷阈值电压模型表示式。该模型的解析解与MEDICI仿真的数值解吻合。
|
| 关 键 词： | DMOS 电离辐照 正空间电荷 阈值电压 场效应晶体管 |
| 文章编号： | 1004-3365(2004)02-0185-04 |
A Threshold Voltage Model of DMOS by Radiation Induced Positive Spatial Charge |
| |
| LI Ze-hong,ZHANG Bo,LI Zhao-ji,CAO Liang.A Threshold Voltage Model of DMOS by Radiation Induced Positive Spatial Charge[J].Microelectronics,2004,34(2):185-188. |
| |
| Authors: | LI Ze-hong ZHANG Bo LI Zhao-ji CAO Liang |
| |
| Abstract: | A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed. Based on the non-uniform distribution of the channel impurity, the distribution of 2-D electric field and 2-D interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation induced positive spatial charge, is analyzed using image charge method. By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained. The results are in good agreement with those of the 2-D simulator MEDICI. |
| |
| Keywords: | Double-diffusion MOSFET Ionizing radiation Positive spatial charge |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
