Energy levels of n-channel accumulation layer on InP surface

Electronic structure of the low lying quantized subbands is calculated for the electron accumulation layer on InP (100) system in a metal-insulator-semiconductor (MIS) structure. Hartree self-consistent technique at an arbitrary temperature has been used, neglecting many-body effects. In contrast to Si MIS system, a second subband is found to be populated even at low temperatures and moderate densities. Excitation energy, E₁₀, is found to be about 30–40 meV in the temperature range 0–300 K at an electron density of 10¹² cm^?2.