Realization of a flux-driven memtranstor at room temperature |
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Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract: | The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor, memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a device made of the magnetoelectric hexaferrite (Ba0.5Sr1.5Co2Fe11AlO22) where the electric polarization is tunable by external magnetic field. This device shows a nonlinear q-φ relationship with a butterfly-shaped hysteresis loop, in agreement with the anticipated memtranstor behavior. The memtranstor, like other memelements, has a great potential in developing more advanced circuit functionalities. |
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Keywords: | fundamental circuit element magnetoelectric effect multiferroic memtranstor memristor |
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