AlO_x/LiF composite protection layer for Cr-doped(Bi,Sb)_2Te_3 quantum anomalous Hall films |
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| Affiliation: | 1.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2.State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China |
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| Abstract: | We have realized robust quantum anomalous Hall samples by protecting Cr-doped(Bi,Sb)_2Te_3 topological insulator films with a combination of LiF and A1O_x capping layers.The AlO_x/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped(Bi,Sb)_2Te_3 films and effectively prevent them from degradation induced by ambient conditions.The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system. |
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| Keywords: | quantum anomalous Hall effect AlOx LiF protection layer |
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