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Ion microbeam radiation system
Authors:Heidel  DF Bapst  UH Jenkins  KA Geppert  LM Zabel  TH
Affiliation:IBM Thomas J. Watson Res. Center, Yorktown Heights, NY;
Abstract:An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of a diameter as small as 1 μm onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system and its operation are described. Applications are described which demonstrate the capabilities of the system
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