Ion microbeam radiation system |
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Authors: | Heidel DF Bapst UH Jenkins KA Geppert LM Zabel TH |
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Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
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Abstract: | An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of a diameter as small as 1 μm onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system and its operation are described. Applications are described which demonstrate the capabilities of the system |
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