| 失配异质结构InGaAs/InP的MOCVD生长 |
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| 引用本文： | 周勇,赵志强,周勋,刘万清,莫才平.失配异质结构InGaAs/InP的MOCVD生长[J].半导体光电,2012,33(6):817-821. |
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| 作者姓名： | 周勇 赵志强 周勋 刘万清 莫才平 |
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| 作者单位： | 重庆光电技术研究所,重庆,400060;重庆邮电大学生物医学工程研究中心,重庆,400066 |
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| 摘 要： | 基于延展波长(截止波长2.2μm)InGaAs-PIN光电探测器进行了失配异质结构InxGa1-xAs(x=0.72)/InP的MOCVD外延生长研究。采用宽带隙组分梯度渐变的InAlAs作为缓冲层和顶层,通过生长优化,获得了满足器件要求的外延材料。
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| 关 键 词： | InGaAs 失配异质结构 MOCVD 梯度渐变InAlAs缓冲层 |
| 收稿时间： | 2012/6/21 0:00:00 |
MOCVD Epitaxial Growth of Mismatched Heterostructure InGaAs/InP |
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| ZHOU Yong,ZHAO Zhiqiang,ZHOU Xun,LIU Wanqing and MO Caiping.MOCVD Epitaxial Growth of Mismatched Heterostructure InGaAs/InP[J].Semiconductor Optoelectronics,2012,33(6):817-821. |
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| Authors: | ZHOU Yong ZHAO Zhiqiang ZHOU Xun LIU Wanqing and MO Caiping |
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| Affiliation: | 1(1.Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN; 2.Research Center of Biomedical Engineering,Chongqing University of Posts and Telecommun.,Chongqing 400066,CHN) |
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| Abstract: | Studied is the MOCVD epitaxial growth of the lattice-mismatched heterostructure InGaAs films on InP substrate with In fraction reaching 72%. Using step grading InAlAs as buffer layers and cap layer, the epitaxial materials which meet the practial requirements were attained by optimizing the growth conditions. |
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| Keywords: | InGaAs lattice-mismatched MOCVD step-grading InAlAs buffers |
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