| 在Si(100)上以AlN作过渡层低温外延生长ZnO薄膜 |
| |
| 引用本文： | 孙林林,刘宏玉,程文娟,马学鸣,石旺舟.在Si(100)上以AlN作过渡层低温外延生长ZnO薄膜[J].人工晶体学报,2005,34(6):1132-1136. |
| |
| 作者姓名： | 孙林林 刘宏玉 程文娟 马学鸣 石旺舟 |
| |
| 作者单位： | 华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062;华东师范大学物理系,上海,200062 |
| |
| 基金项目： | 上海市纳米专项基金资助（No.0352nm009） |
| |
| 摘 要： | 采用脉冲激光沉积(PLD)方法在Si(100)上成功生长了高度c轴取向的AlN薄膜,并以此为衬底,实现了ZnO薄膜的低温准外延生长.通过X射线衍射(XRD)、原子力显微镜(AFM)以及荧光分光光度计表征ZnO薄膜的结构、表面形貌和发光性能.结果表明,ZnO薄膜能在AlN过渡层上沿c轴准外延生长,采用AlN过渡层后,其荧光强度也有大幅提高.
|
| 关 键 词： | 氧化锌薄膜 外延生长 过渡层 光致发光 |
| 文章编号： | 1000-985X（2005）06-1132-05 |
| 收稿时间： | 05 15 2005 12:00AM |
| 修稿时间： | 2005-05-15 |
Low Temperature Epitaxial Growth of ZnO Films on Si(100) Substrates with AlN Buffer Layers |
| |
| SUN Lin-lin,LIU Hong-yu,CHENG Wen-juan,MA Xue-ming,SHI Wang-zhou.Low Temperature Epitaxial Growth of ZnO Films on Si(100) Substrates with AlN Buffer Layers[J].Journal of Synthetic Crystals,2005,34(6):1132-1136. |
| |
| Authors: | SUN Lin-lin LIU Hong-yu CHENG Wen-juan MA Xue-ming SHI Wang-zhou |
| |
| Affiliation: | Department of Physics, East China Normal University, Shanghai 200062 ,China |
| |
| Abstract: | Highly c-axis oriented AlN films were successfully prepared on Si(100) by pulse laser deposition,and quasi-epitaxial growth of ZnO films on the Si substrates with AlN buffer layers was realized.The structure and surface morphology of the deposited ZnO films were characterized by X-ray diffraction spectra and atomic force microscopy.XRD results show that epitaxial growth of c-axis oriented ZnO films with AlN buffer layers was obtained.Moreover,the intensity of photoluminescence of the ZnO films increased significantly. |
| |
| Keywords: | ZnO film epitaxial growth buffer layers photoluminescence |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
|
点击此处可从《人工晶体学报》下载全文 |
|
