Structural and electrical properties of co-evaporated In,Garich CIGS thin films |
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Authors: | Yu-ming Xue Bao-he Yang Chang-qing Qu Li Zhang Chuan-ming Xu Yun Sun |
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Affiliation: | (1) Key Laboratory of State Education Ministry for Silicate Materials Science and Engineering, Wuhan University of Technology, 430070 Wuhan, People Republic of China |
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Abstract: | The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400°C followed by co-evaporation of elemental Cu and Se at 550°C. We study the structural and electrical properties using XRD, XRF and Hall effect measurements. In general, Cu(In,Ga)5Se8 phase exists when Cu/(In+Ga) ratio is from 0.17 to 0.27, Cu(In,Ga)3Se5 phase exists for Cu/(In+Ga) ratio between 0.27 and 0.41, Cu2(In,Ga)4Se7 and Cu(In,Ga)2Se3.5 phases exist for Cu/(In+Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn0.7Ga0.3Se2 phases exist when Cu/(In+Ga) ratio is from 0.61 to 0.88. With the increase of Cu/(In+Ga) ratio, the carrier concentrations of the films gradually increase, but the electrical resistivity gradually decreases. |
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