Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer |
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| Authors: | QL Ma JF Feng Gen Feng XF Han |
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| Affiliation: | a School of Physics and CRANN, Trinity College, Dublin 2, Ireland
b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China |
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| Abstract: | MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (Ta), respectively. The TMR ratio remains inverted up to Ta=300 °C and it becomes normal around Ta=350 °C. The exchange bias of FeMn disappears at high Ta. The sign reversal of the TMR ratio is mainly attributed to the disappearance of the exchange bias due to manganese diffusion during the annealing process. |
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| Keywords: | 73 40 Rw 73 40 Gk 72 25 Mk |
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