Indium-doped ZnOas efficient photosensitive material for sunlight driven hydrogen generation and DSSC applications: integrated experimental and computational approach |
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Authors: | Chauhan Ratna Shinde Manish Sethi Yogesh Waghadkar Yogesh Rondiya Sachin R Dzade Nelson Y Gosavi Suresh Muddassir Mohd |
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Affiliation: | 1.Department of Environmental Science, Savitribai Phule Pune University, Pune, 411007, India ;2.Centre for Materials for Electronics Technology (C-MET), Panchawati, Pune, 411008, India ;3.School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff, CF10 3AT, UK ;4.Department of Physics, Savitribai Phule Pune University, Pune, 411007, India ;5.Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia ; |
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Abstract: | Electricity generation using simple and cheap dye-sensitized solar cells and photocatalytic water splitting to produce future fuel, hydrogen, directly under natural sunlight fascinated the researchers worldwide. Herein, synthesis of indium-doped wurtzite ZnO nanostructures with varying molar percentage of indium from 0.25 to 3.0% with concomitant characterization indicating wurtzite structure is reported. The shift of (002) reflection plane to higher 2θ degree with increase in indium-doping thus is a clear evidence of doping of indium in zinc oxide nanoparticles. Surface morphological as well as microstructural studies of In@ZnO exhibited generation of ZnO nanoparticles and nanoplates of diameter 10–30 nm. The structures have been correlated well using computational density functional (DFT) studies. Diffuse reflectance spectroscopy depicted the extended absorbance of these materials in the visible region. Hence, the photocatalytic activity towards hydrogen generation from water under natural sunlight as well as efficient DSSC fabrication of these newly synthesized materials has been demonstrated. In-doped ZnO exhibited enhanced photocatalytic activity towards hydrogen evolution (2465 μmol/h/g) via water splitting under natural sunlight. DSSC fabricated using 2% In-doped ZnO exhibited an efficiency of 3.46% which is higher than other reported In-doped ZnO based DSSCs. |
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