| 3-D simulation of angled strike heavy-ion induced charge collection in silicon–germanium heterojunction bipolar transistors |
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| 引用本文： | 张晋新,郭红霞,文林,郭旗,崔江维,王信,邓伟,郑齐文,范雪,肖尧.3-D simulation of angled strike heavy-ion induced charge collection in silicon–germanium heterojunction bipolar transistors[J].半导体学报,2014(4):60-65. |
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| 作者姓名： | 张晋新 郭红霞 文林 郭旗 崔江维 王信 邓伟 郑齐文 范雪 肖尧 |
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| 作者单位： | [1]Key Laboratory of Functional Materials and Devices for Special Environments ofCAS, Xinjiang Technical Institute of Physics ＆ Chemistry, Chinese Academy of Sciences, Urumqi 830011, China [2]Northwest Institution of Nuclear Technology, Xi＇ an 710024, China [3]University of Chinese Academy of Sciences, Beijing 100049, China [4]State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （No. 61274106）. The authors want to thank the Institute of Microelectronics, Tsinghua University. |
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| 摘 要： | This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors （SiGe HBTs）. 3D damaged model of SiGe HBTs single-event effects （SEE） is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.
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| 关 键 词： | 硅锗异质结双极晶体管 重离子 3-D SiGe异质结双极晶体管 收集 电荷 诱导 模拟 |
3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors |
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| Zhang Jinxin,Guo Hongxia Wen Lin,Guo Qi,Cui Jiangwei,Wang Xin,Deng Wei,Zhen Qiwen Fan Xue,and Xiao Yao.3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors[J].Chinese Journal of Semiconductors,2014(4):60-65. |
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| Authors: | Zhang Jinxin Guo Hongxia Wen Lin Guo Qi Cui Jiangwei Wang Xin Deng Wei Zhen Qiwen Fan Xue and Xiao Yao |
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| Affiliation: | 1 Key Laboratory of Functional Materials and Devices for Special Environments ofCAS, Xinjiang Technical Institute of Physics ＆ Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2Northwest Institution of Nuclear Technology, Xi＇ an 710024, China 3 University of Chinese Academy of Sciences, Beijing 100049, China 4State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China) |
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| Abstract: | SiGe heterojunction bipolar transistors single-event effects angled strike three-dimensional numer-ical simulation |
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| Keywords: | SiGe heterojunction bipolar transistors single-event effects angled strike three-dimensional numer-ical simulation |
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