| Ta2O5高k介电薄膜的制备及其电学性质的研究 |
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| 引用本文： | 陈勇跃,程佩红,黄仕华.Ta2O5高k介电薄膜的制备及其电学性质的研究[J].半导体技术,2011,36(6):425-429,450. |
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| 作者姓名： | 陈勇跃 程佩红 黄仕华 |
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| 作者单位： | 浙江师范大学物理系,浙江金华,321004;浙江师范大学物理系,浙江金华,321004;浙江师范大学物理系,浙江金华,321004 |
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| 基金项目： | 国家自然科学基金(61076055); 金华科技计划项目(2009-1-141); 复旦大学应用表面物理国家重点实验室开放课题资助(FDS2008-B08) |
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| 摘 要： | 用射频磁控溅射法制备了Ta2O5高介电薄膜,并对其进行了退火处理。用C-V,(G/ω)-V和I-V方法研究了Al/Ta2O5/p-Si结构的电学特性,观测到了C-V和(G/ω)-V的频散效应。认为串联电阻、Si/Ta2O5界面的界面态密度、边缘俘获是频散效应的主要原因,提取了界面态密度和边缘俘获电荷的大小。同时也研究了不同的退火温度对这些参数以及漏电流的影响,经600℃退火后,样品的电容最大,俘获电荷密度和漏电流最小,器件的电学性能最佳。
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| 关 键 词： | Ta2O5薄膜 射频磁控溅射 C-V特性 退火 高介电常数 |
Study of Preparation and Electrical Characteristics of Ta_2O_5 High-k Dielectric Thin Film |
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| Chen Yongyue,Cheng Peihong,Huang Shihua.Study of Preparation and Electrical Characteristics of Ta_2O_5 High-k Dielectric Thin Film[J].Semiconductor Technology,2011,36(6):425-429,450. |
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| Authors: | Chen Yongyue Cheng Peihong Huang Shihua |
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| Affiliation: | Chen Yongyue,Cheng Peihong,Huang Shihua(Department of Physics,Zhejiang Normal University,Jinhua 321004,China) |
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| Abstract: | High permittivity Ta2O5 thin films were deposited by radio-frequency magnetron sputtering and subsequent annealing.The electrical characteristics of the Al/Ta2O5/p-Si structure were investigated by C-V,(G/ω)-V,and I-V methods.The frequency dispersion effect was observed in C-V and(G/ω)-V curves.The series resistance,interface state density of the Si/Ta2O5 interface and border trap charges were considered as the main reason,and the interface state and border trap charges were obtained.The difference of these factors and the leakage current were also studied by annealing temperature process.The results show that an annealing treatment at 600 ℃ results in the highest capacitance and the lowest trapped charge density and leakage current in Ta2O5 film. |
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| Keywords: | Ta2O5 film RF magnetron sputter C-V characteristic annealing high-k |
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