首页 | 官方网站   微博 | 高级检索  
     

外电场作用下M_gF_2电子结构特性研究
引用本文:徐国亮,夏要争,贾光瑞,刘玉芳,智春艳,张现周.外电场作用下M_gF_2电子结构特性研究[J].河南师范大学学报(自然科学版),2009,37(3).
作者姓名:徐国亮  夏要争  贾光瑞  刘玉芳  智春艳  张现周
作者单位:河南师范大学,物理与信息工程学院,河南,新乡,453007
基金项目:国家自然科学基金,河南省自然科学基金,河南省教育厅基础研究项目? 2008A140006? 
摘    要:利用密度泛函B3P86方法在cc-pVTZ基组水平上研究了不同外电场对MgF2分子基态键长、键角、偶极矩、电荷分布、能级分布的影响.结果表明随外电场强度增大,最高占据轨道与最低空轨道能隙变小,占据轨道的电子易于激发至空轨道,因而为研究MgF2材料的电致发光机制提供了一定的理论基础.

关 键 词:MgF2  B3P86  电场  能级

Structural Properties of M_gF_2 Molecule under the External Electric Field
XU Guo-liang,XIA Yao-zheng,JIA Guang-rui,LIU Yu-fang,ZHI Chun-yan,ZHANG Xian-zhou.Structural Properties of M_gF_2 Molecule under the External Electric Field[J].Journal of Henan Normal University(Natural Science),2009,37(3).
Authors:XU Guo-liang  XIA Yao-zheng  JIA Guang-rui  LIU Yu-fang  ZHI Chun-yan  ZHANG Xian-zhou
Affiliation:College of Physics & Information Engineering;Henan Normal University;Xinxiang 453007;China
Abstract:The bond length,bond angle,dipole moment,charge distribution and energy level of MgF2 under different external electric field have been studied using density function theory B3P86 method with the basis set cc-pVTZ.It is shown that the HOMO-LUMO gaps become smaller and the electrons of the occupied orbital are apt to the virtual orbital as the external electric field intensity become strong.Therefore it provides a certain theoretical foundation for the study on the electroluminescent mechanism of MgF2 materi...
Keywords:MgF2  B3P86
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号