Institute for Ultrafast Spectroscopy and Lasers, Physics Department, The City College of New York, New York 10031, USA
Abstract:
A direct measurement of the dynamics of electrons in the X6 valley for a GaAs crystal by time-resolved absorption spectroscopy is reported for the first time. IR picosecond probe pulses were used to monitor the growth and decay of the population in the X6 valley subsequent to excitation by a 527 nm pump pulse. The intervalley X6→Γ6, L6 scattering time tx of 0.70 ± 0.50 ps is determined and the crossection for the X6→X7 transition is estimated to be 1.8 × 10−16 cm2.