抗辐照损伤金属基纳米结构材料界面设计及其响应行为的研究进展

在高能粒子辐照条件下,金属基结构材料内部会出现不同类型的缺陷,这些辐照诱导缺陷的大规模聚集会造成损伤,降低材料的结构稳定性,从而严重影响结构材料的力学和物理性能。通过材料设计的手段引入界面充当缺陷陷阱,可通过对辐照诱导缺陷的分离、吸收和湮灭,有效减轻材料的辐照损伤。纳米结构材料由于含有高密度界面,其辐照损伤行为的研究于近20年快速发展,且界面能被证实是影响界面调控辐照损伤的重要因素。本文聚焦金属基纳米结构材料,围绕界面设计,详细阐述了低能和高能界面设计下,不同结构类型的界面对辐照损伤的影响及界面响应行为的研究进展,为进一步实现界面结构优化,平衡界面能、界面结构稳定性及良好辐照抗性之间的关系提供理论基础和科学依据。最后,基于前述界面设计的思想,总结了近年来发展的碳/金属界面设计及抗辐照损伤的研究进展,展望了未来先进抗辐照金属基纳米结构材料的设计和发展。

Research Progress on the Interface Design and Interface Response of Irradiation Resistant Metal-Based Nanostructured Materials

High-energy particle irradiation can often cause microstructure damage,resulting in different types of defects in metal-based structured materials.These irradiation-induced defects can accumulate and evolve,leading to the deformation and reduction of the structural integrity of the materials.Finally,this causes the degradation of the mechanical and physical properties of the aforementioned materi-als.These defects can be shielded,absorbed,and annihilated by introducing interfaces in materials,alleviating the radiation damage.In the previous two decades,metal-based nanostructured materials have attracted considerable attention in designing irradiation-resistant materials because of its high density of internal interfaces.This review aims to investigate the effect of the interface microstructure and energy on strengthening the irradiation resistance of metal-based nanostructured materials,with special emphasis on the interface responses of low-and high-energy interfaces.Furthermore,this review provides the theoretical and scientific foundation for optimizing the interface structure design and exhibits delicate balance between the interface microstructure,interface energy,interface stability,and irradiation resistance.In addition,the recent research progress on irradiation-resistant carbon-/metal-based nanostructured materials that consider such interface characteristics is reviewed in detail.Finally,the prospect of future irradiationresistant metal-based nanostructured material development is discussed.