A new photo-sensitive voltage-controlled differential negative resistance device—The lambda bipolar photo-transistor

A new photo-sensitive voltage-controlled differential negative resistance device called the LAMBDA bipolar photo-transistor is presented. The basic structure of the Lambda bipolar photo-transistor consists of the simultaneous integration of a bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. The IV characteristic of this new device will exhibit a voltage-controlled differential negative resistance when the device is exposed to light. The operational principle of this new device will be described and the characteristics of the fabricated device are discussed.