Hydrogen implantation defects in MgO |
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| Affiliation: | 1. IRI, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands;2. ECN, P.O. Box 1 1755 ZG Petten, The Netherlands;3. Materials Science Centre, University Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands;1. School of Materials Science and Engineering and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou, 510641, PR China;2. China-Australia Joint Laboratory for Energy & Environmental Materials, South China University of Technology, Guangzhou, 510641, PR China;3. Key Laboratory of Fuel Cell Technology of Guangdong Province, South China University of Technology, Guangzhou, 510641, PR China;1. División de Estudios de Posgrado, Universidad Del Papaloapan, Campus Tuxtepec Circuito Central #200, Col. Parque Industrial, C.P. 68301, Tuxtepec, Oax, Mexico;2. Departamento de Posgrado e Investigación, Tecnológico Nacional de México, Instituto Tecnológico de Oaxaca, Av. Ing, Victor Bravo Ahuja #125 Esq. Clz. Tecnológico, C.P 68030, Oaxaca. Oax, Mexico;3. Instituto de Biotecnología, Universidad Del Papaloapan, Campus Tuxtepec, Circuito Central 200, Col. Parque Industrial, C.P. 68301, Tuxtepec, Oax., Mexico;4. Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Unidad Legaría, Instituto Politécnico Nacional, México, D.F., C.P.1150, Mexico;5. Instituto de Química Aplicada, Universidad Del Papaloapan, Campus Tuxtepec, Circuito Central 200, Col. Parque Industrial, C.P. 68301, Tuxtepec, Oax., Mexico;1. Department of Chemistry, Faculty of Science, Atatürk University, 25240 Erzurum, Turkey;2. Department of Chemistry, College of Sciences, Koç University, 34450 Sarıyer, Istanbul, Turkey;3. Central Research Laboratory, Bayburt University, 69000 Bayburt, Turkey;1. Zhengzhou Tobacco Research Institute of CNTC, Zhengzhou 450001, China;2. China Tobacco Henan Industrial Co. Ltd, Zhengzhou 450016, China |
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| Abstract: | Deuterium and hydrogen ions with an energy of 15 keV have been implanted in virgin MgO (1 0 0) single crystals and in single crystals containing helium implantation generated microcavities. Doses were varied from 2 × 1015 to 2 × 1016 cm−2. The samples were annealed from room temperature to 950 K. The defects produced by hydrogen and the trapping of hydrogen at the defects were monitored by photon absorption and positron beam analysis. With this novel technique a depth distribution of defects can be determined for implantation depths from 0 to 2000 nm. The technique is very sensitive for vacancy and vacancy clusters, i.e. sites with low electron density. After 950 K annealing microcavities were observed for the 2 × 1016 cm−2 dose but not for the 10 times lower dose. During annealing up to 750 K point defects are mobile but the defect clusters remain small and filled with hydrogen. In samples which contain already microcavities, point defects and deuterium from the deuterium irradiation are accumulated by the microcavities. |
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