High quality p-type ZnO film growth by a simple method and its properties |
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| Authors: | FeiYan Mao Hong Deng LiPing Dai JinJu Chen ZhaoLin Yuan Yan Li |
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| Affiliation: | (1) State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;(2) School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China |
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| Abstract: | P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6 · 2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical
and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate
temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased.
When the substrates temperature was 400°C, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm−3, resistivity of 0.04706 Ω · cm and Hall mobility of 259 cm2/(V · s); they still exhibited p-type conduction after a month. When the substrate temperature was too high, the film was
transformed from p-type to n-type conduction.
Supported by Chengdu Science and Technology Project (Grant No. 07GGYB572GX) and Fund of State Key Laboratory (Grant No. L08010301JX0615) |
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| Keywords: | CVD ZnO:N film p-type Hall mobility carrier concentration |
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