Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing |
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Authors: | E Belas M Bugár R Grill J Franc P Moravec P Hlídek P Höschl |
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Affiliation: | (1) Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic |
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Abstract: | (CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and
under various Cd or Te pressures with the aim of eliminating Te or Cd inclusions. Te inclusions were reduced by Cd-saturated
annealing at temperatures above 660°C. Only small (<1 μm) residual dark spots, located at the original position of as-grown inclusions, were observed after annealing. The size of
Cd inclusions was reduced by Te-rich annealing at temperatures higher than 700°C. A specific cooling regime was used to eliminate
new small Te precipitates (∼1 μm) concurrently formed on dislocations during Te-rich annealing. Poor infrared transmittance of samples with Cd inclusions
was detected after Te-rich annealing; therefore, Cd-saturated re-annealing of annealed samples was used for increasing infrared
transmittance to a value above 60%. Alternative models explaining the formation of star-shaped corona-surrounding inclusions
are discussed. |
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Keywords: | (CdZn)Te annealing inclusions precipitates |
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