| ZAO透明导电薄膜微观结构和光电性能的研究 |
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| 引用本文： | 钟志有,顾锦华.ZAO透明导电薄膜微观结构和光电性能的研究[J].人工晶体学报,2011,40(5):1305-1310. |
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| 作者姓名： | 钟志有 顾锦华 |
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| 作者单位： | 1.南民族大学电子信息工程学院,武汉,430074;中南民族大学计算与实验中心,武汉,430074 |
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| 基金项目： | 湖北省自然科学基金(2009CDB166)资助项目; 中南民族大学中央高校基本科研业务费专项资金(CZZ11001)项目资助,中南民族大学学术团队基金(XTZ09003)资助项目 |
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| 摘 要： | 以ZnAl2O4陶瓷靶为靶材,采用射频磁控溅射法制备了掺铝氧化锌(ZAO)透明导电薄膜,通过XRD、SEM、四探针仪和分光光度计等测试,研究了沉积温度对薄膜结构、形貌、力学和光电性能的影响.结果表明:ZAO具有(002)择优取向的六角纤锌矿结构,沉积温度对薄膜性能具有明显影响,当温度位于370～ 400℃区间时,薄膜的结晶质量较好、电阻率较低、可见光波段的平均透射率较高,其品质因数大于1.20×10-2S,具有良好的光电综合性能.同时基于透射光谱计算了ZAO薄膜的光学常数,并用有效单振子理论解释了薄膜的折射率色散关系.
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| 关 键 词： | 掺铝氧化锌薄膜 磁控溅射 微观结构 光电性能 |
Microstructure and Optoelectrical Properties of Transparent Conductive Al Doped ZnO Thin Films |
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| ZHONG Zhi-you
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GU Jin-hua.Microstructure and Optoelectrical Properties of Transparent Conductive Al Doped ZnO Thin Films[J].Journal of Synthetic Crystals,2011,40(5):1305-1310. |
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| Authors: | ZHONG Zhi-you GU Jin-hua |
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| Affiliation: | ZHONG Zhi-you1,GU Jin-hua2 (1.College of Electronic and Information Engineering,South-Central University for Nationalities,Wuhan 430074,China,2.Center of Computing & Experimenting,China) |
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| Abstract: | Transparent conducting aluminum-doped zinc oxide(ZAO) thin film were deposited by RF magnetron sputtering using using ZnAl2O4 as sintered ceramic target.The influence of deposition temperature on microstructure,morphology,mechanical and optoelectrical properties of ZAO films was investigated by XRD,SEM,four-point probe and spectrophotometer respectively.The results showed that the polycrystalline ZAO films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to ... |
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| Keywords: | ZAO thin films magnetron sputtering microstructure optoelectrical properties |
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