Cubic GaN layers grown by metalorganic chemical vapor deposition on GaN templates obtained by nitridation of GaAs |
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| Authors: | H. Vilchis V.M. Sanchez-R. A. Escobosa |
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| Affiliation: | Sección de Electrónica del Estado Sólido, Departamento de Ingeniería Eléctrica, Centro de Investigación y de Estudios Avanzados del I.P.N., Av. Instituto Politécnico Nacional 2508, San Pedro Zacatenco C.P. 07360 México D.F., Mexico |
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| Abstract: | Cubic gallium nitride epitaxial layers were grown by metalorganic chemical vapor deposition on GaN templates obtained by nitridation of GaAs substrates. The GaN structure can be peeled off the GaAs substrate and it can be handled separately. X-ray diffraction, Raman and photoluminescence measurements show that the epitaxial layers are cubic and monocrystalline. |
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| Keywords: | Cubic gallium nitride Metalorganic chemical vapor deposition X-ray diffraction |
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