XPS Investigation on Surface and Interface Electronic States of Alq3／ITO

The surface and interface electronic states of tris-(8-hydroxyquinoline)aluminum(Alq3)/indium-tin oxid(ITO)were measured and analyzed by X-ray photoelectron spectroscopy(XPS).The results indicated that, in Alq3 molecule,the binding energy(Eb)of Al atoms is 70.7eV and 75.1eV,corresponding to Al(O)and Al(Ⅲ）,respectively;The binding energy of C is 285.8eV,286.3eV,and 286.8eV,corresponding to C of C-C group,C-O,and C-N bond,respectively,N is the main peak locating at 401.0eV, corresponding to Natom of C-N=C.Oatoms mainly bond o H atom,with the binding energy of 533.2 eV.As the sputtering time of Ar^ ion bearn increases,Al2p,C1s,N1s,O1s,Ind3d5/2 and Sn3d5/2 peaks slightly shift towards lower binding energy,and Al2p,C1s and N1s peaks get weaker,which contributed to diffusing the oxygen,indium and tin in ITO into Alq3 layr.

XPS Investigation on Surface and Interface Electronic States of Alq3/ITO

The surface and interface electronic states of tris-(8-hydroxyquinoline) aluminum (Alq3)/indium-tin oxide (ITO) were measured and analyzed by X-ray photoelectron spectroscopy (XPS). The results indicated that, in Alq3molecule, the binding energy (Eb) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533. 2 eV. As the sputtering time of Ar+ion beam increases, Al2p, C1s, N1s, O1s, In3d5/2and Sn3d5/2 peaks slightly shift towards lower binding energy, and Al2p, C1sand N1speaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq3 layer.