Optical properties of Si0.8Ge0.2/Si multiple quantum wells |
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Authors: | K.H. Shim Y.-H. Kil H.K. Lee M.I. Shin T.S. Jeong S. Kang C.-J. Choi T.S. Kim |
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Affiliation: | Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Department of Physics, Chonbuk National University, Jeonju 561-756, Republic of Korea |
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Abstract: | The optical property was studied on the Si0.8Ge0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm−1, corresponding to the vibration of Si–Si, Si–Ge, and Ge–Ge phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si MQW. For Si0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electron–heavy hole (e–hh) and electron–light hole (e–lh) fundamental excitonic transitions. |
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Keywords: | Raman PL PC MQW UHV-CVD SiGe |
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