| 辅助加热PCVD-TiN薄膜的制备及影响因素 |
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| 引用本文： | 彭红瑞,石玉龙,谢雁,李世直,赵程. 辅助加热PCVD-TiN薄膜的制备及影响因素[J]. 青岛科技大学学报(自然科学版), 1998, 0(3) |
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| 作者姓名： | 彭红瑞 石玉龙 谢雁 李世直 赵程 |
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| 作者单位： | 青岛化工学院等离子体表面技术研究所 |
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| 摘 要： | 研究了反应气体对辅助加热ＰＣＶＤ ＴｉＮ薄膜制备的影响。结果表明，提高反应气体中ＴｉＣｌ４的含量可以提高薄膜的沉积速率，而且对薄膜内的氯含量没有影响。提高反应气体中的Ｖ（Ｈ２）／Ｖ（Ｎ２）可以略降低薄膜内的氯含量，在Ｖ（Ｈ２）／Ｖ（Ｎ２）＝２，ＴｉＣｌ４的体积分数为１０％左右时ＴｉＮ薄膜的硬度最高。随着反应气压的升高，沉积速率呈正比上升而显微硬度却下降。
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| 关 键 词： | 辅助加热；等离子体化学气相沉积（PCVD）；反应气体 |
Preparation of Auxiliary Heating PCVD TiN Coatings and Their Effect Factors |
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| Peng Hongrui Shi Yulong Xie Yan Li Shizhi Zhao Cheng. Preparation of Auxiliary Heating PCVD TiN Coatings and Their Effect Factors[J]. Journal of Qingdao University of Science and Technology:Natutral Science Edition, 1998, 0(3) |
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| Authors: | Peng Hongrui Shi Yulong Xie Yan Li Shizhi Zhao Cheng |
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| Abstract: | The effect of deposition gases on auxiliary heating PCVD TiN coatings has been studied. The experiments indicated that with the increase of TiCl 4 content in deposition gases the deposition rate increased and the content of Cl in TiN film remained constant.While H 2/N 2 increased, the content of Cl decreased a little. And at H 2/N 2=2,TiCl 4 content at 10%,the microhardness of TiN reached its maximum value . With the increase of reaction pressure, the deposition rate increased but the microhardness decreased. |
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| Keywords: | auxiliary heating plasma CVD reaction gases |
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