Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures |
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Authors: | Avakyants L P Bokov P Yu Chervyakov A V Chuyas A V Yunovich A E Vasileva E D Bauman D A Uelin V V Yavich B S |
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Affiliation: | 1.Physical Faculty, Moscow State University, Moscow, 119991, Russia ;2.JSC “Svetlana-Optoelectronics”, pr. Engel’sa 27, St. Petersburg, 194156, Russia ; |
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Abstract: | Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy
of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence
spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference
fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the
heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range
from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect
to different reflecting surfaces in the cavity. |
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