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高分辨X射线衍射法研究碳化硅单晶片中的多型结构
引用本文:董捷,胡小波,徐现刚,王继扬,韩荣江,李现祥.高分辨X射线衍射法研究碳化硅单晶片中的多型结构[J].人工晶体学报,2004,33(6):918-921.
作者姓名:董捷  胡小波  徐现刚  王继扬  韩荣江  李现祥
作者单位:山东大学晶体材料国家重点实验室,济南,250100
基金项目:国家自然科学基金 (No .6 0 0 2 5 40 9),国家 86 3高技术计划 (No .2 0 0 1AA31 1 0 80 )资助
摘    要:我们采用高分辨X射线衍射法对SiC单晶片中的多型结构进行了研究,研究发现在以4H-SiC为籽晶的晶体生长过程中,4H-SiC、6H-SiC、15R-SiC出现两相共存或三相共存现象.在单相、两相或三相共存区,X射线摇摆曲线具有明显不同的特征.根据多型结构,可以对摇摆曲线中的衍射峰进行鉴定.

关 键 词:碳化硅  多型  高分辨X射线衍射仪  摇摆曲线  
文章编号:1000-985X(2004)06-0918-04

Investigation on the Polytype Structure of SiC Crystal Slice by High Resolution X-ray Diffractometry
DONG Jie,HU Xiao-bo,XU Xian-gang,WANG Ji-yang,HAN Rong-jiang,LI Xian-xiang.Investigation on the Polytype Structure of SiC Crystal Slice by High Resolution X-ray Diffractometry[J].Journal of Synthetic Crystals,2004,33(6):918-921.
Authors:DONG Jie  HU Xiao-bo  XU Xian-gang  WANG Ji-yang  HAN Rong-jiang  LI Xian-xiang
Abstract:The polytype structure of SiC single crystal slice was investigated by high resolution X-ray diffractometry. We discovered that there are two or three phase existence of 4H-SiC,6H-SiC,15R-SiC in the process of the growth of 4H- SiC seed at a definite condition. At different regions the rocking curves have remarkably different features. Base on the polytype structures of SiC, the diffraction peaks can be identified in the rocking curves.
Keywords:SiC  polytype  high resolution X-ray diffractometry  rocking curve
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