| 定向ZnO纳米钉阵列的制备及生长机理 |
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| 引用本文： | 周明,冯程程,吴春霞,马伟伟,李刚,蔡兰.定向ZnO纳米钉阵列的制备及生长机理[J].发光学报,2009,30(5):717-721. |
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| 作者姓名： | 周明 冯程程 吴春霞 马伟伟 李刚 蔡兰 |
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| 作者单位： | 江苏大学 光子制造科学与技术江苏省重点实验室, 江苏 镇江 212013 |
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| 基金项目： | 国家自然科学基金重点，教育部全国百篇优秀博士论文作者基金 |
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| 摘 要： | 在550 ℃下,采用化学气相沉积(CVD)法在镀Au(10 nm)的Si(100)衬底上,制备了ZnO一维纳米钉阵列结构。X射线衍射(XRD)谱图中只显示了(002)衍射峰,其半峰全宽为0.166°,表明制备的纳米钉阵列具有高度c轴择优生长取向的特点和较高的结晶质量,高分辨透射电子显微镜(HRTEM)和选区电子衍射图(SAED)谱的结果表明所得到的单根纳米钉为沿(002)生长的单晶结构;同时,对一维纳米钉阵列的生长机理进行了分析。结果表明:由于Si与ZnO之间大的晶格失配度,首先在Si表面沉积一层富Zn的ZnOx薄膜缓冲层,然后通过VLS机理中的底端生长模式生长成为纳米钉阵列结构。
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| 关 键 词： | 纳米钉 ZnO纳米阵列 化学气相沉积 |
| 收稿时间： | 2008-12-08 |
Preparation and Growth Mechanism of Well-aligned ZnO Nanonails Synthesized by Chemical Vapor Deposition |
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| ZHOU Ming,FENG Cheng-cheng,WU Chun-xia,MA Wei-wei,LI Gang,CAI Lan.Preparation and Growth Mechanism of Well-aligned ZnO Nanonails Synthesized by Chemical Vapor Deposition[J].Chinese Journal of Luminescence,2009,30(5):717-721. |
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| Authors: | ZHOU Ming FENG Cheng-cheng WU Chun-xia MA Wei-wei LI Gang CAI Lan |
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| Affiliation: | Jiangsu Provincial Key Laboratory for Science and Technology of Photon Manufacturing, Jiangsu University, Zhenjiang 212013, China |
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| Abstract: | Well-aligned ZnO nanonails were synthesized on Au coated Si(100) substrates via chemical vapor deposition(CVD) method at 550 ℃. The presence of only (002) diffraction peak and its corresponding FWHM of 0.166° in the XRD patterns indicated that the ZnO nanonails exhibited (002) preferred orientation and good crystal quality. HRTEM and SAED results showed that the ZnO nanonails are single-crystal. Growth mechanism of the ZnO nanonails was also presented. The results showed that due to the large lattice mismatch between ZnO and Si, ZnOx buffer layer is firstly deposited on Si substrate, and then ZnO nanonails are grown perpendicularly on the substrate by VLS mechanism. |
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| Keywords: | nanonail ZnO array CVD |
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