15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer |
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| Authors: | Stegmueller B Baur E Kicherer M |
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| Affiliation: | Corporate Res., Infineon Technol. AG, Munich; |
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| Abstract: | Monolithically integrated InGaAsP 1.55-/spl mu/m ridge waveguide distributed feedback laser diodes with an electroabsorption modulator using an identical active multiquantum-well (MQW) layer structure with two different QW types exhibit low-threshold currents <18 mA. The 3-dBe cutoff frequency of 200-/spl mu/m-long modulators exceeds 15 GHz. 10-Gb/s transmission experiments with a voltage swing of 1.0 V/sub pp/ demonstrate the potential of this novel integration scheme. |
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