晶格小失配InGaAsP材料特性及太阳电池应用

Ⅲ-Ⅴ族太阳电池效率的持续提升要求对能量转换材料的带隙宽度进行更细致划分,以实现对全光谱的高效利用。在短波红外波段,四元InGaAsP混晶材料因在带隙宽度和晶格常数的调节上具有很好的可操作性,是一种极具潜力的短波红外光电转换材料。本文对InGaAsP材料生长及子电池器件制备进行了研究,通过时间分辨荧光光谱、高分辨X射线衍射等表征手段对室温下晶格失配的InGaAsP材料进行了测试分析。实验结果表明,在一定程度负失配生长条件下,InGaAsP材料质量随着负失配程度逐渐提高。在后续电池制备过程中,一定程度负失配同样有助于电池器件性能提升,制备的单结电池开路电压由晶格匹配时的633 mV提高到负失配条件下的684 mV,从而为高效多结太阳电池的应用提供了新的技术路线。

Small Lattice-mismatched InGaAsP:Material Characterization and Application in Solar Cells

The continuous improvement in efficiency ofⅢ-Ⅴsolar cells requires further detailed subdivision of the bandgap of energy conversion materials,to realize more efficient utilizing of the full solar spectrum.In the short wave infrared spectrum,InGaAsP quaternary hybrid material is a potential photoelectric conversion material due to its tunableness in bandgap and lattice constant.In this paper,the growth of InGaAsP materials and the fabrication of sub-cell devices were studied.The characteristics of lattice-mismatched InGaAsP materials were tested and analyzed by HRXRD,TRPL and other characterization methods at room temperature.Under negative mismatch growth condition,the quality of InGaAsP material increases gradually with the negative mismatch degree.Applied to sub-cell fabrication,a certain degree of negative mismatch is conducive to the improvement of device performance.The open-circuit voltage of the fabricated single-junction solar cell increases from 633 mV at lattice-matching to 684 mV at negative lattice-mismatch,thus providing a novel method to improve the efficiency ofⅢ-Ⅴmultijunction solar cell.