无序光子晶体提高GaN基蓝光发光二极管光提取效率的研究

亚波长尺度光子晶体结构可有效提升发光二极管(LED)的光提取效率(LEE),然而在制造过程中会存在缺陷或无序.利用时域有限差分法对理想方形光子晶体结构进行了优化,在此基础上对三种无序光子晶体结构进行了仿真,研究了光子晶体结构参数的无序变化对GaN基蓝光LED LEE的影响.结果表明,光子晶体空气孔位置和半径的无序变化使优化的80 nm光子晶体LED的LEE下降,而可使非优化的60nm光子晶体LED的LEE增加；当光子晶体空气孔位置和半径的无序变化量从0到士20 nm之间变化时,LEE最大会产生53.8％的浮动；光子晶体刻蚀深度的无序变化对LEE影响较小,一般可以忽略,研究结果为高性能蓝光光子晶体LED的设计制作提供了重要的理论参考.

Improvement of light extraction efficiency of GaN-based blue light-emitting diode by disorder photonic crystal

Sub-wavelength photonic crystal can effectively improve the light extraction efficiency (LEE) of the light emitting diode (LED). However, it is inevitable to have defects, (namely disorder structures) during its fabrication. In this study, the LED model with ideal quadrate photonic crystal is optimized by using the finite-different time domain method. Three different LED structures with various disordered photonic crystals are further simulated. We investigate the influences of several stochastic variables (including position, radius, and depth of an air hole) of the photonic crystal on the LEE of GaN based blue LEDs. It can be found that regarding photonic crystal LED whose air hole radius is optimized to 80 nm, the stochastic variables of the position and radius will reduce its LEE. However, an opposite trend is found when this radius is replaced by 60 nm, which is not optimized. Furhermore, the LEE fluctuates inside to an extent of 53.8% as two stochastic variables (including the randomized position and the randomized radius) change from 0 nm to ±20 nm. The influence of the stochastic variables of the depth of air hole can be neglected since this variation is very small. The results in this paper have an important reference value for designing and fabricating high-performance blue light photonic crystal LED.