On the Einstein Relation in Ternary Semiconductors in the Presence of Crossed Electric and Magnetic Fields

We investigate theoretically the Einstein relation for the diffusivity-mobility ratio of the electrons in ternary semiconductors at low temperatures in the presence of crossed electric and quantizing magnetic fields on the basis of threeband Kane model. It is found, taking n-Hg_1-xCd_xTe as an example, that DMR shows an oscillatory magnetic field dependence. Besides, the DMR increase both with increasing electron concentration and decreasing alloy composition respectively.