| 一种格栅状上电极的CMOS工艺聚酰亚胺电容型湿度传感器 |
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| 引用本文： | 贾水英,杨建红,谢宏伟,蔡雪原,吴承龙. 一种格栅状上电极的CMOS工艺聚酰亚胺电容型湿度传感器[J]. 电子器件, 2011, 34(3): 242-246. DOI: 10.3969/j.issn.1005-9490.2011.03.002 |
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| 作者姓名： | 贾水英 杨建红 谢宏伟 蔡雪原 吴承龙 |
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| 作者单位： | 兰州大学微电研究所; |
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| 摘 要： | 报道了采用标准CMOS工艺制作的格栅型上电极的电容型湿度传感器,采用高分子材料聚酰亚胺作为感湿介质,铝作为金属电极.对该湿度传感器的器件结构、制作工艺和传感器特性,如灵敏度、湿滞以及响应时间等进行了讨论.测试结果表明,在12%～92%的湿度范围内,电容一相对湿度曲线具有良好的线性度,灵敏度为0.9 pF/RH,响应时间...
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| 关 键 词： | 电容型湿度传感器 聚酰亚胺 CM0S工艺 响应时间 |
A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process |
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| JIA Shuiying,YANG Jianhong,XIE Hongwei,CAI Xueyuan,WU Chenglong. A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process[J]. Journal of Electron Devices, 2011, 34(3): 242-246. DOI: 10.3969/j.issn.1005-9490.2011.03.002 |
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| Authors: | JIA Shuiying YANG Jianhong XIE Hongwei CAI Xueyuan WU Chenglong |
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| Affiliation: | JIA Shuiying,YANG Jianhong*,XIE Hongwei,CAI Xueyuan,WU Chenglong(Institute of Microelectronics,Lanzhou University,Lanzhou 730000,China) |
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| Abstract: | A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported.The humidity sensor uses polyimide thin film as humidity-sensitive layer,and aluminum as upper electrode and lower electrode.Details of device structure,fabrication process and sensor characteristics such as sensitivity,hysteresis,and response time are discussed.Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%,the sensitivity is 0.9 pF/RH,and... |
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| Keywords: | capacitive humidity sensor polyimide CMOS process response time |
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