Lpe growth of Hgl?xCdxTe using conventional slider boat and effects of annealing on properties of the epilayers |
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Authors: | K Nagahama R Ohkata K Nishitani T Murotani |
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Affiliation: | (1) LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, 664 Hyogo, Japan |
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Abstract: | The epitaxial layers of Hg1−xCdxTe (0.17≦×≦0.3) were grown by liquid phase epitaxy on CdTe (111)A substrates using a conventional slider boat in the open
tube H2 flow system. The as-grown layers have hole concentrations in the 1017− 1018 cm−3 range and Hall mobilities in the 100−500 cm2/Vs range for the x=0.2 layers. The surfaces of the layers are mirror-like and EMPA data of the layers show sharp compositional
transition at the interface between the epitaxial layer and the substrate. The effects of annealing in Hg over-pressure on
the properties of the as-grown layers were also investigated in the temperature range of 250−400 °C. By annealing at the temperature
of 400 °C, a compositional change near the interface is observed. Contrary to this, without apparent compositional change,
well-behaved n-type layers are obtained by annealing in the 250−300 °C temperature range. Sequential growth of double heterostructure,
Hgl−xCdxTe/Hgl−yCdyTe on a CdTe (111)A substrate was also demonstrated. |
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Keywords: | liquid phase epitaxy Hgl− xCdxTe multilayer growth annealing infrared detector |
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