Thermoelectric Oxides: Effect of Doping in Delafossites and Zinc Oxide |
| |
Authors: | E. Guilmeau A. Maignan C. Martin |
| |
Affiliation: | (1) Laboratoire CRISMAT, UMR 6508, ENSICAEN/CNRS, 6 boulevard du Maréchal Juin, F-14050 Caen Cedex 4, France |
| |
Abstract: | The electrical resistivity (ρ) and Seebeck coefficient (S) of the three delafossites CuFe0.9Cr0.1O2, CuCr0.98Mg0.02O2, and CuRh0.9Mg0.1O2 have been measured and their power factor (PF) calculated. These p-type oxides show PF values at 800 K from 1.4 × 10−4 W K−2 m−1 to 6.9 × 10−4 W K−2 m−1. In contrast to delafossites containing Fe or Cr, for which ρ exhibits a regime, the Rh-based delafossite shows a metallic regime from 5 K to 1000 K. This points toward the role of the transition-metal electronic configuration in the transport properties. Otherwise, similar PF values are obtained in the case of the n-type Al-doped ZnO. For these oxides, the ρ and PF values are minimum and maximum, respectively, for x = 0.01. However, the presence of spinel impurities even for x = 0.01 in Zn1−x Al x O or for x = 0.02 in CuCr1−x Mg x O2 calls into question the role of the doping element in the physical properties. This should motivate a deeper insight into the physics of thermoelectric oxides. |
| |
Keywords: | Oxides delafossite thermoelectricity |
本文献已被 SpringerLink 等数据库收录! |
|