Packaged AlGaAs waveguide modulator array at 830 nm wavelength |
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Authors: | Bristow J. Lehman J. Hibbs-Brenner M. Yue Liu Marta T. Goldberg T. Kalweit E. Sullivan C.T. Mukherjee S.D. Walterson B. Singh D.R. Tyrone B.H. Jr. Ireland T.J. |
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Affiliation: | Technol. Center, Honeywell Inc., Bloomington, MN ; |
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Abstract: | We report a fully packaged AlGaAs waveguide modulator array with four individually addressable elements operating at approximately 830 nm wavelength and a clock speed of 1 GHz. The modulators rely largely on the linear electro-optic effect for operation, and have been packaged with an E/D MESFET driver with complementary 3.5 V outputs, and a thick-film ceramic bias network. The device is compact, using multimode interference devices for on-chip splitters and combiners and has a 4 mm electrode length. Extinction ratios in excess of 10 dB have been demonstrated over a temperature range from room temperature to 143°C. The modulator array has been packaged with a remote high power (100 mW) diode laser using stable single mode input coupling, while the modulator output is packaged with a multimode fiber array of 52.5 μm core diameter |
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