| 一种基于点压技术的新型晶圆键合方法 |
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| 引用本文： | 许维,王盛凯,徐杨,王英辉,陈大鹏,刘洪刚. 一种基于点压技术的新型晶圆键合方法[J]. 焊接学报, 2016, 37(9): 125-128 |
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| 作者姓名： | 许维 王盛凯 徐杨 王英辉 陈大鹏 刘洪刚 |
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| 作者单位： | 1.中国科学院微电子研究所 微电子器件与集成技术重点实验室, 北京 100029;中国科学院微电子研究所 高频高压器件与集成研发中心, 北京 100029 |
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| 摘 要： | 金金热压键合法在半导体制造领域中应用广泛,为了进一步改进该键合方法,首次提出了一种基于点压技术的新型晶圆键合方法,并研究了工艺温度、压强以及时间对点压键合法单点键合面积的影响. 通过超声扫描显微镜图像,着重比较了传统金金热压键合法与点压键合法的键合面积比. 对点压键合法的可选择键合性进行了讨论. 结果表明,点压键合法工艺步骤简单,工艺稳定性较好,且具有一定的可选择键合特性,在半导体制造领域中将具有广泛的应用前景.
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| 关 键 词： | 晶圆键合 热压键合 金金键合 点压键合法 |
| 收稿时间： | 2016-03-13 |
A new wafer bonding method based on spot pressing technique |
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| XU Wei,WANG Shengkai,XU Yang,WANG Yinghui,CHEN Dapeng and LIU Honggang. A new wafer bonding method based on spot pressing technique[J]. Transactions of The China Welding Institution, 2016, 37(9): 125-128 |
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| Authors: | XU Wei WANG Shengkai XU Yang WANG Yinghui CHEN Dapeng LIU Honggang |
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| Affiliation: | Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Beijing 100029, China;Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Beijing 100029, China;Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China,Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China and Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Beijing 100029, China;Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | Au-Au thermocompression bonding is widely used in many applications of semiconductor manufacturing. In order to improve the bonding method, a new wafer bonding method based on spot pressing technique was proposed for the first time. The bonded area dependence of bonding temperature, pressure and time were investigated. In addition, the bonded area ratio was compared between conventional Au-Au thermocompression bonding and spot pressing bonding by the image of scanning acoustic microscopy. The bonded area selectivity of SPB was discussed at the end of this article. The results show that the bonding process is simple and stable and the bonded area selectivity is also good in spot pressing bonding. which has an extesive prospect in applications of semiconductor manufacturing. |
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| Keywords: | wafer bonding thermocompression bonding Au-Au bonding spot pressing bonding |
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