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掺钠钼电极在硒化铜铟镓(CIGS)太阳能薄膜电池应用
引用本文:陈文志,叶智为,张然,曾百亨,陈朝,张风燕.掺钠钼电极在硒化铜铟镓(CIGS)太阳能薄膜电池应用[J].无机化学学报,2014,30(12):2753-2760.
作者姓名:陈文志  叶智为  张然  曾百亨  陈朝  张风燕
作者单位:厦门大学能源学院光伏薄膜中心实验室, 厦门 361100;台湾国立中山大学材料与光电科学学系, 高雄 800042;厦门大学能源学院光伏薄膜中心实验室, 厦门 361100;台湾国立中山大学材料与光电科学学系, 高雄 800042;厦门大学能源学院光伏薄膜中心实验室, 厦门 361100;厦门大学能源学院光伏薄膜中心实验室, 厦门 361100
基金项目:国家985资助项目(No.1270K51001).
摘    要:适量钠元素对铜铟镓硒薄膜生长具有促进作用,本文主要研究了掺钠钼电极特性及其对铜铟镓硒薄膜太阳能电池性能的影响。利用磁控溅射方法制备不同厚度的钼钠/钼(Mo Na/Mo)薄膜作为背电极,并在(Mo Na/Mo)薄膜电极上蒸镀铜铟镓硒(CIGS)薄膜,并利用单质硒源硒化处理后制备CIGS薄膜电池。SEM和XRD结果表明采用三层叠层Mo/Mo/Mo Na薄膜做电极的Mo Na容易被氧化,电阻率增加,采用四层叠层Mo/Mo/Mo Na/Mo薄膜电极方式有效降低电阻率,阻止Mo Na被氧化,CIGS晶粒较大且致密。在同一条件下,在不同Mo Na/Mo厚度电极上制备CIGS薄膜电池,80 nm Mo Na厚度上的CIGS薄膜电池效率达6.54%。

关 键 词:掺钠钼电极  铜铟镓硒  效率  电阻率
收稿时间:2014/6/12 0:00:00
修稿时间:9/5/2014 12:00:00 AM

Application of Na-Doped Mo Electrodes on Copper Indium Gallium Diselenide (CIGS) Thin-Film Solar Cells
CHEN Wen-Zhi,YE Zhi-Wei,ZHANG Ran,ZENG Bai-Heng,CHEN Chao and ZHANG Feng-Yan.Application of Na-Doped Mo Electrodes on Copper Indium Gallium Diselenide (CIGS) Thin-Film Solar Cells[J].Chinese Journal of Inorganic Chemistry,2014,30(12):2753-2760.
Authors:CHEN Wen-Zhi  YE Zhi-Wei  ZHANG Ran  ZENG Bai-Heng  CHEN Chao and ZHANG Feng-Yan
Affiliation:Photovoltaic Thin Film Central Lab, School of Energy, Xiamen University, Xiamen, Fujian 361100, China;Material and Photoelectricity Science Department, National Sun-Yat Sen University, Gaoxiong, Taiwan 800042, China;Photovoltaic Thin Film Central Lab, School of Energy, Xiamen University, Xiamen, Fujian 361100, China;Material and Photoelectricity Science Department, National Sun-Yat Sen University, Gaoxiong, Taiwan 800042, China;Photovoltaic Thin Film Central Lab, School of Energy, Xiamen University, Xiamen, Fujian 361100, China;Photovoltaic Thin Film Central Lab, School of Energy, Xiamen University, Xiamen, Fujian 361100, China
Abstract:An appropriate concentration of Na element is able to promote the growth of Copper Indium Gallium Diselenide (CIGS) thin films. This paper is mainly focused on the study of characteristics of Na-doped Mo electrodes and their effect on the performance of CIGS thin-film solar cells. In this work, the thin-film CIGS solar cells were fabricated as follows: (i) different thicknesses of MoNa/Mo thin films prepared by magnetron sputtering were used as back electrodes; (ii) CIGS thin films were evaporated on the top of MoNa/Mo electrodes; (iii) the CIGS thin films were post-processed by selenation process using an elemental Se source and later CIGS solar cells were finally made. The results of SEM and XRD reveal that, for the solar cells using three layers of Mo/Mo/MoNa thin films as an electrode, MoNa is easily oxidized and the resistivity of electrode increases, while, for the solar cells using four layers of Mo/Mo/MoNa/Mo thin films as an electrode, the resistivity of electrode can be effectively reduced, MoNa can be prevented from being oxidized and the CIGS grains are large and dense. Under the same experimental conditions, for the CIGS solar cells with different thicknesses of MoNa/Mo thin films as electrodes, the CIGS solar cell using MoNa with a thickness of 80 nm as an electrode has the highest conversion efficiency of 6.54%
Keywords:Na-doped Mo electrodes  CIGS  conversion efficiency  resistivity
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