| 真空微电子器件的数值模拟计算与分析 |
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| 引用本文： | 潘明政,牛憨笨.真空微电子器件的数值模拟计算与分析[J].光子学报,1992,21(2):97-101. |
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| 作者姓名： | 潘明政 牛憨笨 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 710068
(潘明政，牛憨笨)，中国科学院西安光学精密机械研究所 710068(杨勤劳) |
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| 摘 要： | 本文用数值方法和场致发射的福勒—诺德海姆公式计算了薄膜场致发射阴极(TFFEC)的伏安特性和其应用于平板显示系统的空间扩展特性以及格雷型场效应管的时间响应特性 通过计算得到了TFFEC在不同失端和表面形状情况下的伏安特性曲线,并分析了阴极结构的一致对其发射的均匀性和稳定性的影响。应用TFFEC的新型平板显示系统,其空间分辨能力与阳栅距、栅极电压有很大关系。格雷型场效应管具有皮秒级的响应时间。
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| 关 键 词： | 真空微电子学 TFFEC 场致发射 边界元法 数值计算 平板显示 场效应管 |
| 收稿时间： | 1991-07-22 |
NUMERICAL ANALYSIS OF VACUUM MICROELECTRONICS DEVICES |
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| Pan Mingzheng Niu Hanben Yang QinlaoXi'an Institute of Optics and Precision Mechanics,Academia Sinica.NUMERICAL ANALYSIS OF VACUUM MICROELECTRONICS DEVICES[J].Acta Photonica Sinica,1992,21(2):97-101. |
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| Authors: | Pan Mingzheng Niu Hanben Yang QinlaoXi'an Institute of Optics and Precision Mechanics Academia Sinica |
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| Affiliation: | Pan Mingzheng Niu Hanben Yang QinlaoXi'an Institute of Optics and Precision Mechanics,Academia Sinica,710068 |
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| Abstract: | This paper deals with Thin Film Field Emitting cathode (TFFEC) in numerical method. Its V-C character is calculated with Fowler-Nordheim formula The effect of the cathode tip radius and the smallprotrude on the surface is considered It is said that the configuration varity of the cathodes is very important for their emitting uniformity and stability. The space spread function of the TFFEC is also evaluated when it is used in flat panel display device and that depends on the distance between anode and gate electrode, voltage of gate strongly. The time response of Gray-type field effect tube is calculated to be teens picoseconds. |
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| Keywords: | Vacuum microelectronics TFFEC Field emitting Boundary element method Flat panel display Field effect tube |
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