| 半导体可饱和吸收镜调Q的Yb∶LSO激光器 |
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| 引用本文： | 宋晏蓉,胡江海,周劲峰,赵广军,严成锋,苏良碧,徐军,郭凯,张志刚.半导体可饱和吸收镜调Q的Yb∶LSO激光器[J].中国激光,2006,33(10):1297-1300. |
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| 作者姓名： | 宋晏蓉 胡江海 周劲峰 赵广军 严成锋 苏良碧 徐军 郭凯 张志刚 |
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| 作者单位： | 北京工业大学应用数理学院，北京工业大学应用数理学院，北京工业大学应用数理学院，中国科学院上海光学精密机械研究所，中国科学院上海光学精密机械研究所，中国科学院上海光学精密机械研究所，中国科学院上海光学精密机械研究所，北京工业大学应用数理学院，北京工业大学应用数理学院 北京100022，北京100022，北京100022，上海201800，上海201800，上海201800，上海201800，北京100022，北京100022，北京大学量子电子学中心，北京100871 |
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| 基金项目： | 北京市优秀人才基金(20041D0501511)，北京市教委基金(KM200610005004)，国家杰出青年基金(60425516)，国家重点基础研究项目(G1999075201-2)资助课题 |
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| 摘 要： | 报道了一个激光二极管(LD)抽运多波长连续输出的激光器和一个被动调Q的固体激光器。该激光器的增益材料是一种新型掺Yb3 的晶体Yb3 ∶Lu2SiO5(Yb∶LSO)。当吸收的抽运功率为2.57 W时,连续输出的最大功率为490 mW,斜率效率为22.2%,光-光转换效率为14.2%,激光阈值为299 mW,输出激光波长为1084 nm。多波长输出时,波长调谐范围为1034~1085 nm。利用InGaAs可饱和吸收镜实现调Q输出时,斜率效率为3.0%,激光波长为1058 nm。脉冲重复频率为25~39 kHz,重复频率随着抽运功率的增加而增加。
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| 关 键 词： | 激光器 半导体可饱和吸收镜调Q 激光材料 半导体抽运 |
| 收稿时间： | 2006/3/13 |
Laser Diode-Pumped Q-Switched Yb∶LSO laser with a Semiconductor Saturable Absorber Mirror |
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| SONG Yan-rong,HU Jiang-hai,ZHOU Jin-feng,ZHAO Guang-jun,YAN Cheng-feng,SU Liang-bi,XU Jun,GUO Kai,ZHANG Zhi-gang.Laser Diode-Pumped Q-Switched Yb∶LSO laser with a Semiconductor Saturable Absorber Mirror[J].Chinese Journal of Lasers,2006,33(10):1297-1300. |
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| Authors: | SONG Yan-rong HU Jiang-hai ZHOU Jin-feng ZHAO Guang-jun YAN Cheng-feng SU Liang-bi XU Jun GUO Kai ZHANG Zhi-gang |
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| Affiliation: | SONG Yan-rong~1,HU Jiang-hai~1,ZHOU Jin-feng~1,ZHAO Guang-jun~2,YAN Cheng-feng~2,SU Liang-bi~2,XU Jun~2,GUO Kai~1,ZHANG Zhi-gang~ |
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| Abstract: | New Yb-doped crystal Yb3+∶Lu2SiO5 (Yb∶LSO) lasers pumped by diode-laser at 976 nm with passively Q-switched and multi-wavelength continuous-wave (CW) output were demonstrated. The maximum CW output power was 490 mW with the absorbed pump power of 2.57 W. The slope efficiency and optical-optical conversion efficiency were 22.2% and 14.2% respectively. The threshold was 299 mW, and the laser wavelength was 1084 nm. The wavelength could be tunable from 1034 to1085 nm with a prism. For the Q-switched output, the laser operated at 1058 nm with an InGaAs semiconductor saturable absorber mirror (SESAM). The Q-switched output slope efficiency of 3.0% with the maximum absorbed pump power of 1.73 W was also obtained. The pulse repetition rate was 25～39 kHz and was increased with the pump power increased. |
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| Keywords: | lasers semiconductor saturable absorber mirror Q-switched laser materials laser diode-pumped |
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