脱钴预处理对金刚石/硬质合金附着性能的影响

采用不同的两步处理方式浸蚀YG3和YG6低钴硬质合金基体表面，随后在热丝化学气相沉积装置上沉积了金刚石薄膜，分别用扫描电子显微镜、能谱仪以及洛氏硬度计对样品进行了分析检测。结果表明先采用Murakami剂30min腐蚀碳化钨相，再用3H2SO4 7H2O230s混合酸去除钴相，样品金刚石薄膜形核密度高，结晶质量较好，金刚石涂层与硬质合金基体结合良好。同一处理工艺，YG6系列样品处理效果更好。基体钴含量的降低对改善硬质合金与金刚石涂层间的附着性能有利。

Effect of Cobalt-Etched Treatment on the Adhesion between Diamond Films and WC-Co Cemented Carbide

Diamond films were deposited on Tungsten Carbide-3%Cobalt and Tungsten Carbide-6%Cobalt with different two-step surface pretreatments by Hot Filament Chemical Vapor Deposition (CVD). The surface morphology, composition and adhesion of the diamond films were investigated by means of Scanning Electron Microscope (SEM), Energy Dispersion Spectroscope(EDS) and Rockwell hardness tester. The results showed that using Murakami reagent for etching 30 min, then H2SO4: H2O2=3:7 solution for removing cobalt 30s, the diamond nucleation density of these two kinds of samples is greatly increased, resulting in a good adhesion between diamond film and the substrate. Under the same pretreatment conditions, the quality of the diamond coating on the serious of WC6 %Co samples is much better. The adhesive strength of diamond film and the cemented carbide can be greatly enhanced by reducing the content of cobalt on the surface of WC substrate.