采用电化学法测量Ga_xIn_(1-x)As和Ga_xIn_(1-x)As_(1-y)P_y的掺杂浓度分布

研究了InP掺杂浓度分布,确认测量系统的可信性.在多元材料生长中,组分控制重复性欠佳的情况下,根据每片材料的C~(-2)-V特性测出内建电势V_D,可以得出接近于材料实际的掺杂浓度分布.测得掺杂浓度在10~(16)cm~(-3)的Ga_(0.47)In_(0.53)As的V_D约0.3V.结果表明,用作长波长的光探测器的N型三元层掺杂分布平坦.闭管锌扩散形成的P-N结为突变结型.

Measuring Impurity Profile of Ga_xln_(1-x)As and Ga_xln_(1-x)As_(1-y)P_y by Electrochemical Technique

Impurity profile of InP material has been studied and the measuring system is proved to be trustworthy. The measured profile is close to the real one only using the built-in potential VD resulted from the C-2-V characteristic of each wafer itself in case the componet of the polynary compound can't be reproduced exactly during its growth. VD of the Ga0.47In0.53As with a doping density of 10~(16)cm-3 is about 0.3V. The results show that the profile of the N ternary layer for a long wavelength potode-tector is flat and the P-N junction formed by closed-tube Zn diffusion is abrupt.