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一种新型IGBT驱动及保护电路的研究
引用本文:田松亚,甘正华,孙烨,付炜亮. 一种新型IGBT驱动及保护电路的研究[J]. 电焊机, 2007, 37(7): 61-63
作者姓名:田松亚  甘正华  孙烨  付炜亮
作者单位:河海大学,江苏,常州,213022
摘    要:阐述了软降栅压和软关断的过电流保护原理,列出具体的保护时序参数.设计了过电流保护驱动电路,讨论了栅射集电阻对降栅压过程的影响,并提出一种可变栅射集电阻电路.在此基础上,得到了效果良好的试验结果.

关 键 词:IGBT  过电流保护  软降栅压及软关断  栅射极电阻
文章编号:1001-2303(2007)07-0061-03
修稿时间:2006-12-29

Research of a new IGBT drive and protection circuit
TIAN Song-ya,GAN Zheng-hua,SUN Ye,FU Wei-liang. Research of a new IGBT drive and protection circuit[J]. Electric Welding Machine, 2007, 37(7): 61-63
Authors:TIAN Song-ya  GAN Zheng-hua  SUN Ye  FU Wei-liang
Affiliation:Hohai University, Changzhou 215022, China
Abstract:Slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.A particular over-current protection and drive circuit is given ,the impact of resistance between gate and emitter on gate voltage dropping is discussed ,and an adjustable gate-emitter resistance circuit is put forward.On these bases,we obtain a good experimental result.
Keywords:IGBT  over-current protection   slowly-drop gate voltage and softly turn-off   resistance between gate and emitter
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