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S波段高效GaN逆E类功率放大器
引用本文:曹韬,刘友江,曾荣,吕立明.S波段高效GaN逆E类功率放大器[J].微波学报,2011,27(4):49-52.
作者姓名:曹韬  刘友江  曾荣  吕立明
作者单位:中国工程物理研究院电子工程研究所,绵阳,621900
摘    要:介绍一种高效逆E类功率放大器的设计方法,并选用GaN器件设计了工作于2.3GHz的逆E类功率放大器。当供电26V,输入功率26dBm时,放大器输出功率40.2dBm,工作效率76.1%,PAE为73.3%。提供了详尽的仿真与实测数据并对放大器性能进行分析。用数字预失真技术对逆E类功率放大器进行线性化校正并取得了良好的效果。

关 键 词:E类功率放大器  高效率  GaN  数字预失真

S-Band High Efficiency GaN Inverse-Class E Power Amplifier
CAO Tao,LIU Youjiang,ZENG Rong,LV Liming.S-Band High Efficiency GaN Inverse-Class E Power Amplifier[J].Journal of Microwaves,2011,27(4):49-52.
Authors:CAO Tao  LIU Youjiang  ZENG Rong  LV Liming
Affiliation:CAO Tao1,LIU You-jiang2,ZENG Rong1,LV Li-ming1(1.Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China,2.Department of Engineering Physics,Tsinghua University,Beijing 100084,China)
Abstract:A design methodology of high efficiency inverse-class E power amplifier is presented in this paper.An output power 40.2dBm at 2.3GHz with drain efficiency of 76.1% and power-added efficiency of 73.3% in supply of 26V is obtained.Simulations and experimental results are offered and the performance of the proposed amplifier has been analyzed in detail.Furthermore,digital predistortion is used to increase the linearity of inverse class-E power amplifier,and a high degree of spectral suppression for out-of-band...
Keywords:class E power amplifier  high efficiency  GaN  digital predistortion  
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